2012. 2. 24 1/2 semiconductor technical data kdr105s schottky barrier type diode revision no : 2 high frequency rectification (switching regulators, converters, choppers) features h low forward voltage : v f max=0.55v. h low leakage current : i r max=10 a. maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. nc 2. anode 3. cathode 2 1 3 electrical characteristics (ta=25 ? ) type name marking lot no. dl characteristic symbol test condition min. typ. max. unit reverse voltage v r i r =50 a 50 - - v forward voltage v f i f =0.1a - - 0.55 v reverse current i r v r =25v - - 10 a total capacitance c t v r =10v, f=1mhz - 7.7 - pf characteristic symbol rating unit repetitive peak reverse voltage v rrm 50 v reverse voltage v r 50 v average forward current i o 0.1 a non-repetitive peak surge current i fsm 2 a junction temperature t j 125 ? storage temperature t stg -55 q 125 ?
2012. 2. 24 2/2 kdr105s revision no : 2
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